Thank you @aalam for your previous confirmatory reply.
However, I am experiencing another relevant problem. I am using previous version of DEVICE (4.6.590) to simulate silicon pn junction, using the Klaassen model for impurity scattering (for both electrons and holes). I am using Klaassen model because it is mentioned in the KB that this model is specifically tuned for silicon at 300K. However, when I run my simulation, I get errors saying “Bad reference material” and “solver failed”. For exactly the same structure and simulation setup the simulation would not fail if I’d use the default silicon material from the material database (instead of my copy of silicon material where I am using various models - let’s call it mySilicon). The simulation would also run without this error if I only change from Klaassen to Masetti in mySilicon material. Please advise me where am I going wrong. My suspicion, however, is that the Klaassen model is using very different parameters for electrons as compared to holes (I found out by clicking “…” button in front of the model name). The parameters for holes have all the values of r (total 6) and s (total 7) set to zero and all the other parameters are set to 1 (except for Nref1, NrefA and NrefD which are set to 1e+30). Should not we use the same parameter values of Klaassen model for electrons and holes? If yes, which one should be used (the one specified for electrons or the one specified for holes)?