I’m trying to simulate a photodetector which has a quantum well to absorb low energy photons. The idea of quantum well photodetector is that the fermi level pins inside the quantum well. But in my simulation with DEVICE, I always get the energy levels below the conduction band of quantum well, while I’m trying highest possible doping in n section. (the structure is n-i-n). SO, it means that Iäm doing something wrong or it is not possible to simulate quantum well or dot structure with DEVICE, FDTD?
DEVICE uses a semi-classical solver and it uses the bulk 3D DOS to calculate the carrier densities in materials. Since you need to perform quantum mechanical calculations to find the eigen energies of a quantum well/dot, you cannot use DEVICE to simulate such a structure.