I have an integrated silicon rib waveguide that has been excited with
visible wavelength light from the surface. I obtained the generation rate from FDTD. I then imported this generation rate in to DEVICE where I want to obtain the steady state excess free electron and hole concentrations assuming CW visible light excitation. I’ll note that the doping in the waveguide is low (uniform NA = 1e15 /cm^3) and the incident light intensity is relatively high, therefore I am expecting high injection conditions, i.e. that dn = dp >> 1e15/cm^3.
I am receiving the following error:
SIGETERMSRV(process 0): The program terminated due to an error: Initialization failed to converge electrostatic potential update.
SIGETERMSRV(process 0): Error: there was an unknown parallel error. The error code is 9002, the process number is 0
I have attached my project file. Any assistance would be greatly appreciated.
wg_absorption_DEVICE.ldev (6.2 MB)