Hello everyone, I’m doing some simulations for nanowires using DEVICE. In the nanowire, there is a section which has a structure like Semiconductor-SiO2-Semiconductor. I was trying to look at the band structure, charge distribution and electric field profile at this section. But it is really confusing to me.
Firstly, the band structure doesn’t show the existence of the large band gap SiO2. I check the material database, dielectric constant is the only parameter insulators have (no band gap information). Maybe this is the reason. But won’t this affect the simulation results?
Also, when I look at the charge monitor. It shows that in the SiO2 layer p and n are not zero. Shouldn’t the SiO2 have not charge at all?
Please help me on this. Many thanks.