I am confused in result which is given in your example of pin MZI modulator (https://kb.lumerical.com/en/pic_modulators_pin_mzi.html) because this change in loss with respect to voltage shows very high change in imaginary part of effective index which looks impossible for ‘silicon rib’ structure as silicon doesn’t show electro-absorptive property. can u please help me if you have any theory or reference about it? Thanks in advance
The change in refractive index is due to the change in carrier concentration in the Silicon. There is some discussion and references listed on the following page:
Thank-you for your reply sir.