Someone could help me, please. I am configuring a pn junction modulator based on the following example:
On my device, I need to simulate a modulator with 3 levels of doping, as shown in the figure below:
where the concentrations are given by:
P = N = 5*10^17 (cm-3)
P + = N + = 1*10^19 (cm-3)
P ++ = N ++ = 1*10^20 (cm-3)
However, I have a problem and some doubts:
1) According to my schematic of the figure above, the device set up in DEVICE (modulator.ldev) is correct?
modulator.ldev (5.9 MB)
2) When I calculate the capacitance of the device (Junction_Capacitance.lsf), the result is not being generated correctly. Could someone tell me what is wrong in the script?
Junction_Capacitance.lsf (958 Bytes)