# MIM tunnel junction near and far field patten

#1

Hi,

I am trying to simulate the Metal-Insulator-metal junction from the paper - " Highly efficient on-chip direct electronic–plasmonic transducers" (attached). More specifically I am trying to simulate the structure in fig. S10-S13 given in its supplementary paper(attached). I am facing difficulties with the results not matching the paper. I am attaching my .fsp file and would like you to have a look at it.

I’d also like to replicate the graph, Fig 2e from the main paper. Any insights regarding the approach for different voltages applied would be helpful.

P.S- I’ve used all the sources and monitors in the same file. Enable and disable them according to the simulation

Regards,
Saurabh

#2

Hi @nke,

It’s always tricky to try and duplicate results from a paper, as often, the actual simulation settings are not fully provided. As a starting point, I would review the plasmon simulation methodology and the common simulation consideration pages in our Knowledge Base.

• Mesh: plasmons are very sensitive to the mesh size nearby the metal interfaces. This will be tricky since the $AlO_x$ layer is only 2nm thick. In your simulation, the mesh in x direction is too big to resolve the thickness. You can add different mesh override regions to cover each 3 elements and resolve their thickness.