I’m trying to obtain optical generation rate of a unit solar cell with indium tin oxide front contact. The Si substrate is etched in the form of a inverse pyramid and then there’s a deposited thin layer of indium tin oxide.
My question is related to properties of ITO. According to the simulation result, ITO seems like absorbing photons and generating electron-hole pairs. I’m not familiar with the properties of ITO. So, I wonder if ITO’s ehp generation is a physical phenomenon or it’s just due to solar generation algorithm which considers that every absorbed photon generates an ehp.
If latter is the case, I guess it would lead to an erroneous Jsc as the solar generation windows includes ITO contact. So, what can I do to exclude this additional current ?
2D_Pyramid.fsp (318.9 KB)