I am trying to simulate a phonon polariton Thz nano hole array resonator. The reference of basic idea can be found in this paper: https://link.springer.com/article/10.1007/s00339-007-4084-8. The attached are my FDTD file and modified script calculate the volume averaged field enhancement in the paper.
FTIR CAVITY.fsp (465.9 KB) usr_integrate_poynting2.lsf (1.8 KB)
The material property of SiC is based on Lorentz model, which can be found here: https://iopscience.iop.org/article/10.1088/1464-4258/9/9/S07.
The plot I got is in reasonable agreement with the paper, but the E field distribution always has some ‘hotspots’ which looks like the artefact.
This can be more apparent when I tried to simulate our own structure, which consists of a dielectric layer on top of a phonon polariton substrate.
BaF2.fsp (1.9 MB)
Can anybody helps me deal with this problem? Thanks!