I know that we can easily dope semiconductors in DEVICE (CHARGE). However, I wish to analyze the difference in optical absorption for n-type and p-type Si, and also analyze the the optical activity at the depletion region. Subsequently, I wish to calcuate the short circuit current density generated, but I can do that in DEVICE. However, I can’t seem to find any way to dope Si in FDTD Solutions. In the examples provided in the Lumerical site that involved both FDTD and DEVICE, no form of daoping was used for FDTD.
I want to know if that is the norm, or if there is a way to dope the Si in FDTD Solutions.
Here is my fsp file: solar_plasmonic_normal.fsp (286.7 KB)