I am trying to simulate EQE in simple planar geometry consisting of Al-InO-Si-Al layers. I would like to model the change in EQE with different recombination values between InO/Si interface with final goal of fitting the EQE spectra with experiment.
I am having trouble with simulation. It does not converge when I set InO layer as a semiconductor(we know doping 5e19, mobility 50 and workfunction of 5.5eV from experiment). When I set InO as a metal then the recombination does not seem to have any effect on the current.
I have uploaded the device file (https://www.dropbox.com/s/dfjlxsz71upqprq/solar_InO_test.ldev?dl=0). Could you please let me know where the issue is.