I was wondering how does DEVICE calculate Dark current in PDs. What parameters does it take into account. does it take into account the Trap density and energy or surface leakage?.
The dark current in a PD comes from the different recombination mechanisms in the device. The semiconductor material models supported by DEVICE allows the modeling of various types of recombination such as trap-assisted (SRH), auger, radiative, band-to-band, impact ionization, and surface recombination. The KB pages describing the semiconductor models of DEVICE have more details on these different models: Material model - Semiconductors and Material interface. It is up to the user to decide whether to use all of the models or a selection of them.