I’m trying to get a simple pn junction diode model working with point source ehp current generation. I place the ehp current source in the middle of the depletion region of my pn junction, and I set the generation rate to be 6.241e12 (equivalent to 1 uA). I apply a -2V reverse bias on the junction and run a steady state simulation.
When I analyze the results, I expect to see very close to 1uA of current flowing through both the p-type and n-type metal contacts. However, I get 10 nA – a factor of 100 smaller than expected.
I’ve attached the simulation script used to setup and run the simulation. I’m attempting to simulate a periodic structure, so I placed the charge simulation domain on a mirror symmetry line in the device.
testing.lsf (3.5 KB)