I want to see the effect of changing doping concentration on the performance of my p-n junction solar cell. I have few question regarding the SRH carrier lifetime.
The carrier lifetime is given as input. My question is : for what doping concentration this carrier lifetime is given input?
If I want to correct the lifetime using Fossum’s correction model, then how it will use the carrier lifetime that I have given as input above? What is No in the fossum model formula? How the input carrier lifetime is related to this fossum model?
Is fossum model applicable for other material system like GaAs/ GaN? if so then what should be the value of No?
Thanks in advance.