Is it possible to simulate Avalanche PDs in Device. How can I simulate carrier multiplication? any suggestion on how this can be done?
How should I proceed? the carrier generation object in FDTD doesn’t consider the multiplication.
I am trying to replicate the results presented in the attached paper. A high-responsivity photodetector absent metalgermanium.pdf (2.4 MB)
Does Device calculate the fringe electric field between the two electrodes?