I’m trying to simulation a pn junction along (the center of) a waveguide. If I know the lateral straggle of my dopant, and the location of junction (e.g. the center of the WG), how am I supposed to set up the parameters using diffusion doping? More specifically, how do I choose the doping region boundary and the junction width? What is difference between Gaussian and erfc?
Regards,
Chuan